Technical details
Sustainability certificatesRoHS
Features
JEDEC standardY
Programming power voltage (VPP)2.5 V
CAS latency17
Refresh row cycle time260 ns
Internal memory typeDDR4
Compatible chipsetsIntel® H110
ECCN
Memory bandwidth (max)19.2 GB/s
Row cycle time46.5 ns
Memory channelsDual-channel
Memory form factor288-pin DIMM
Buffered memory typeUnregistered (unbuffered)
Component forPC/Server
Memory clock speed2400 MHz
Memory layout (modules x size)1 x 8 GB
Product colourBlack
Internal memory8 GB
Memory voltage1.2 V
Row active time33 ns
Operational conditions
Storage temperature (T-T)-55 - 100 °C
Operating temperature (T-T)0 - 85 °C
Weight & dimensions
Width133 mm
Weight18 g
Height31 mm
Packaging data
Package width168 mm
Package height88 mm
Package weight36 g
Other features
Country of originChina
Chips organisationx8 FBGA DRAM